ESR Study of (La,Ba)MnO3/ZnO Nanostructure for Resistive Switching Device
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چکیده
منابع مشابه
ESR Study of (La,Ba)MnO3/ZnO Nanostructure for Resistive Switching Device
Structure, electric, and resonance properties of (La,Ba)MnO3/ZnO nanostructure grown on SrTiO3 (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evol...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2017
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-017-1961-8